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| FQP85N06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
100μ s
102
1 ms
10 ms
DC
101
â» Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100
10-1
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. V = 10 V
GS
2. I = 42.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
100
80
60
Limited by Package
40
20
0
25
50
75
100
125
150
175
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
1 0 -2
sin g le p u ls e
â» Notes :
1. Zθ
(t)
JC
=
0.94
â /W
Max.
2 . D u t y Fa c t o r , D = t /t
12
3. T
JM
-T =
C
P*
DM
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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