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| FQP7P06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 60V P-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. VGS = 0 V
2. ID = -250 μ A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
101
10 ms
DC
100
â» Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
10-1
100
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = -10 V
2. ID = -3.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
8
6
4
2
0
25
50
75
100
125
150
175
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0.5
0 .2
0 .1
0 .05
0 .02
0 .01
s in g le p u ls e
â» N ote s :
1.
Zθ
(t)
JC
=
3.35
â /W
M ax.
2. D u ty F actor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
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