FQP7N60 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9

Notes :
1. V_GS = 0 V
2. I =250A
D
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10²
Operation in This Area
is Limited by R
DS(on)
10¹
10⁰
10^-1
10⁰
100 µs
1 ms
10 ms
DC

Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100

Notes :
1. V_GS = 10 V
2. I_D = 3.7 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [
]
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
D =0 .5
1 0 ^-1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 ^-2
s in g le p u ls e

N otes :
1.
Z


(t)
JC
=
0.8 8
 /W
M ax.
2 . D u t y F a c t o r , D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z


(t)
JC
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000