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| FQP6N80 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 800V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
101
100μs10μs
1 ms
10 ms
DC
100
10-1
10-2
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. ID = 2.9 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .05
0 .02
0 .01
sin g le p u lse
â» N otes :
1.
Z
θ
(t)
JC
=
0.7 9
â /W
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, September 2000
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