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| FQP34N20L Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 200V LOGIC N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R DS(on)
102
100 µs
1 ms
101
10 ms
DC
100
10-1
100
â» Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. ID = 17 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0 .5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
â» N o te s :
1 . Z θ JC(t) = 0 .7 â /W M a x.
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P D M * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, June 2000
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