FQP30N06 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VI_DG=S =2500V_μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10³
Operation in This Area
is Limited by R _DS(on)
10²
100 µs
1 ms
10 ms
10¹
DC
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 175 ^oC
3. Single Pulse
10^-1
10^-1
10⁰
10¹
10²
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. I = 15 A
D
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
1 0 ⁰ D =0 .5
1 0 ^-1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1 . Z _{θ J C}( t ) = 1 . 9 0 ℃ /W M a x .
2 . D u t y Fa c t o r , D = t ₁/t ₂
3 . T _{J M} - T _C = P _{D M} * Z _{θ J C}( t )
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003