FQP2P40 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 400V P-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1. V_GS = 0 V
2. I_D = -250 μA
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
10¹
DS(on)
100 µs
1 ms
10 ms
10⁰
DC
10^-1
※ Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10^-2
10⁰
10¹
10²
10³
-V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = -10 V
2. I_D = -1.0 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
2.0
1.6
1.2
0.8
0.4
0.0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10 ⁰ D = 0 .5
1 0 ^-1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N o te s :
1 . Z _{θ JC}(t) = 1 .9 8 ℃ /W M a x.
2 . D u ty F a c to r, D = t /t
12
3 . T _JM - T _C = P _{D M} * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-2
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A2, December 2000