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FQP13N50CF Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
œ Notes :
1. VGS = 0 V
2. ID=250µA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
for FQP13N50CF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
œ Notes :
1. VGS = 10 V
2. ID = 6.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50CF
103
Operation in This Area
is Limited by R
DS(on)
102
10 µs
100 µs
101
1ms
10ms
100ms
100
DC
* Notes :
10-1
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
10-2
100
101
102
103
V , Drain-SourceVoltage[V]
DS
Figure 10. Maximum Drain Current
vs. Case Temperature
103
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
103
V , Drain-SourceVoltage[V]
DS
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature []
4
FQP13N50CF / FQPF13N50CF Rev. A1
www.fairchildsemi.com
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