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| FQI10N20C Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
â» Notes :
1. V = 0 V
GS
2. I = 250 μ A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
100 µs
101
1 ms
10 ms
DC
100
â» Notes :
10-1
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
â» Notes :
1. VGS = 10 V
2. ID = 4.75 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs Temperature
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [â]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le pu ls e
â» N o tes :
1.
Zθ
(t)
JC
=
1 .7 4
â /W
M ax.
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
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