FQH70N10 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – FQH70N10 100V N-Channel MOSFET

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. V_GS = 0 V
2. I_D = 250 μ A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10³
Operation in This Area
is Limited by R _DS(on)
10²
100 µs ^{10 µs}
1 ms
10 ms
DC
10¹
10⁰
10^-1
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 175 ^oC
3. Single Pulse
10¹
10²
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 35 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10⁰
D = 0.5
1 0 ^-1
1 0 ^-2
0 .2
0 .1
0 .05
0 .02
0 .01
sin g le p u lse
※ N otes :
1.
Z_θ
(t)
JC
=
0 .7
℃ /W
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z_θ
(t)
JC
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003