FQA13N50CF Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2.
I
D
=
250
µA
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 9-1. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. I = 7.5 A
D
-50
0
50
100
150
200
T,
J
Junction
Temperature
[°C]
Figure 10. Maximum Drain Current
vs. Case Temperature
10²
10¹
10⁰
10^-1
10⁰
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1.
T
C
=
25°C
2. T_J = 150°C
3. Single Pulse
10¹
10²
10³
V , Drain-Source Voltage [V]
DS
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T,
C
Case
Temperature
[°C]
Figure 11. Transient Thermal Response Curve
10⁰
D = 0 .5
1 0 ^-1
1 0 ^-2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sin g le p u lse
N o tes :
1.
Z (t)
θJC
=
0.5 8
°C /W
M ax.
2. D u ty F acto r, D = t /t
12
3. T - T = P * Z (t)
JM
C
DM
θJC
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t , S q u a re W a ve P u lse D u ra tio n [se c]
1
4
FQA13N50CF Rev. A
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