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FQA13N50C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
◁
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※Notes :
1.
2.
VIDG=S =2500VµA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2.
3.
STJin=gl1e5P0uolCse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
VIDG=S
= 10
6.75
V
A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0.0 5
0.0 2
0 .0 1
sin g le p u lse
※ N otes :
1.
2.
3.
Z
D
T
θJuMJtCy-(TtF)Ca=c=t0oP.5rD,8MD℃*=Zt/1Wθ/t2JCM( t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q ua re W ave P u lse D u ra tio n [se c]
Figure 11. Transient Thermal Response Curve for FQA13N50C
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
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