FPAB20BH60B Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – Smart Power Module(SPM®) for Front-End Rectifier

Absolute Maximum Ratings (T_J = 25°C, Unless Otherwise Specified)
Converter Part
Item
Input Supply Voltage
Input Supply Voltage (Surge)
Output Voltage
Output Voltage (Surge)
Collector-emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (peak)
Collector Dissipation
Repititive Peak Reverse Voltage
Peak Forward Surge Current
Operating Junction Temperature
Symbol
V_i
V_i(Surge)
V_PN
V_PN(Surge)
V_CES
I_C
I_CP
P_C
V_RRM
I_FSM
T_J
Condition
Applied between R-S
Applied between R-S
Applied between P- N
Applied between P- N
T_C = 25°C, T_J < 150°C
T_C = 25°C, T_J < 150°C
Under 1ms pulse width
T_C = 25°C per One IGBT
Single half sine-wave
Control Part
Item
Symbol
Condition
Control Supply Voltage
V_CC Applied between V_CC - COM
Input Signal Voltage
Fault Output Supply Voltage
V_IN Applied between IN - COM
V_FO Applied between V_FO - COM
Fault Output Current
Current Sensing Input Voltage
I_FO Sink Current at V_FO Pin
V_SC Applied between C_SC - COM
Rating
264
500
450
500
600
20
40
Unit
V_RMS
V
V
V
V
A
A
89
W
600
V
250
A
-40 ~ 150 °C
Rating Unit
20
V
-0.3~V_CC+0.3 V
-0.3~V_CC+0.3 V
5
mA
-0.3~V_CC+0.3 V
Total System
Item
Storage Temperature
Isolation Voltage
Symbol
T_STG
V_ISO
Condition
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
Rating
-40 ~ 125
2500
Unit
°C
V_rms
Thermal Resistance
Item
Junction to Case Thermal
Resistance
Symbol
R_q(j-c)Q
R_q(j-c)F
R_q(j-c)R
IGBT
FRD
Rectifier
Condition
Min. Typ. Max.
- - 1.4
- - 1.4
- - 2.1
Unit
°C/W
°C/W
°C/W
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