FMG2G75US120 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Molding Type Module

16
1 4 ^{Common Emitter}
V_GE = ± 15 V, R_G = 10Ω
1 2 ^{TC = 25℃ ℃℃}
T_C = 125℃ ------
10
8
6
4
2
0
30
40
50
60
70
80
C o ll e c t o r C u rr e n t, I [ A ]
C
Eon
E o ff
90
100
Fig 7. Switching Loss vs. Collector Current
Common Emitter
V_CC = 600 V, V_GE = ± 15 V
1000
I_C = 75 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
T o ff
100
Tf
10
0
10
20
30
40
50
G ate R e sista n c e, R [
G _Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
15
Common Emitter
12
R_L = 7.5 Ω
V_CE = 600V
T_C = 25℃
9
6
3
0
0
100
200
300
400
500
600
Gate Charge, Qg [ nC ]
Fig 11. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
1000
Common Emitter
V_CC = 600 V, V_GE = ± 15 V
I_C = 75 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
Ton
Tr
100
0
10
20
30
40
50
G ate R e sista n c e, R [
G _Ω]
Fig 8. Turn-on Characteristics vs.
Gate Resistance
20
Common Emitter
16
V_CC = 600 V, V_GE = ± 15 V
I_C = 75 A
T_C = 25℃ ℃℃
T_C = 125℃ ------
12
Eon
8
E o ff
4
0
0
10
20
30
40
50
G ate R e sista n c e, R [ ]
G_Ω
Fig 10. Switching Loss vs. Gate Resistance
160
Common Cathode
1 4 0 _{VGE = 0V}
120
T_C = 25℃
T_C = 125℃
100
80
60
40
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward Voltage, V_F [V]
Fig 12. Forward Characteristics(diode)
FMG2G75US120 Rev. A