FMG2G200US60 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Molding Type Module

Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 200A
T_C = 25℃ ━━
T_C = 125℃ ------
10
E o ff
Eon
1
0
5
10
15
20
25
30
G ate R e sista n c e, R g [ ]
Ω
Fig 7. Switching Loss vs. Gate Resistance
Common Emitter
V_GE = ± 15V, R_G = 2Ω
1 0 0 0 ^TC ^{= 25℃ ━━}
T_C = 125℃ ------
T o ff
Tf
100
100
150
200
250
300
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 9. Turn-Off Characteristics vs.
Collector Current
15
Common Emitter
12
I_C = 200A
V_CC = 300V
T_C = 25 ^oC
9
6
3
0
0
100 200 300 400 500 600 700
G ate C h arg e, Q [n C ]
g
Fig 11. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
1000
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
100
150
200
250
300
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 8. Turn-On Characteristics vs.
Collector Current
100
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
10
E o ff
Eon
1
100
150
200
250
300
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 10. Switching Loss vs. Collector Current
500
Common Cathode
V_GE = 0V
4 0 0 ^TC ^{= 25℃}
T_C = 125℃
300
200
100
0
0
1
2
3
4
F o r w a r d V o lt a g e , V [ V ]
F
Fig 12. Forward Characteristics(diode)
FMG2G200US60 Rev. A