FMG1G400US60L Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – Molding Type Module

Common Emitter
100
V_CC = 300V, V_GE = ± 15V
I_C = 400A
T_C = 25℃ ━━
T_C = 125℃ ------
E o ff
Eon
10
2
4
6
8
10
12
14
G ate R e sista n c e, R g [ ]
Ω
Fig 7. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
T o ff
Tf
100
280
320
360
400
C o ll e c t o r C u rr e n t, I [ A ]
C
Fig 9. Turn-Off Characteristics vs.
Collector Current
15
Common Emitter
12
I_C = 400A
V_CC = 300V
T_C = 25 ^oC
9
6
3
0
0
200
400
600
800 1000 1200
G ate C h arg e, Q [n C ]
g
Fig 11. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
1000
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
280
320
360
400
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 8. Turn-On Characteristics vs.
Collector Current
100
Common Emitter
V_GE = ± 15V, R_G = 2Ω
T_C = 25℃ ━━
T_C = 125℃ ------
E o ff
Eon
10
1
280
320
360
400
C o ll e c t o r C u r r e n t, I [ A ]
C
Fig 10. Switching Loss vs. Collector Current
800
Common Cathode
V_GE = 0V
600
T_C = 25℃
T_C = 125℃
400
200
0
0
1
2
3
4
F o r w a r d V o lt a g e , V [ V ]
F
Fig 12. Forward Characteristics (diode)
FMG1G400US60L Rev. A