FGPF45N45T Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 450V, 45A PDP Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
4
30A
45A
I_C = 20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 100V
200V
9
6
3
0
0
30
60
90
120
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
t_r
10
1
0
t_d(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 45A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
10000
1000
C_ies
C_oes
C_res
100
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
500
I_C MAX (Pulse)
100
10µs
100µs
10
1 ^{IC MAX (Continuous)}
1ms
10 ms
Single Nonrepetitive
0.1 ^{Pulse TC = 25oC}
DC Operation
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
100
10
0
t_f
t_d(off)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 45A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGPF45N45T Rev. A
4
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