FGH40N60UFD Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 40A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
T_C = 25^oC
100
20V ^15V
12V
Figure 2. Typical Output Characteristics
120
T_C = 125^oC
100
15V
20V
12V
80
80
60
60
10V
10V
40
40
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
120
Common Emitter
100
V_GE = 15V
T_C = 25^oC
80 ^{TC = 125oC}
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
120
Common Emitter
V_CE = 20V
100 _{TC = 25}o_C
T_C = 125^oC
80
60
60
40
40
20
20
0
0
1
2
3
4
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.5
Common Emitter
V_GE = 15V
3.0
80A
0
5 6 7 8 9 10 11 12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = - 40^oC
16
2.5
12
2.0
40A
1.5
I_C = 20A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
8
4
40A ^80A
I_C = 20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGH40N60UFD Rev. C
4
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