FGB3040CS_12 Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT

Typical Performance Curves ^(Continued)
40
V_GE = 8.0V
V_GE = 5.0V
30 ^{VGE = 4.5V}
V_GE = 4.0V
V_GE = 3.7V
20
40
V_GE = 8.0V
V_GE = 5.0V
30 ^{VGE = 4.5V}
V_GE = 4.0V
V_GE = 3.7V
20
10
T_J = -40^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
10
T_J = 25^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 8. Collector to Emitter On-State Voltage
vs. Collector Current
40
V_GE = 8.0V
V_GE = 5.0V
30 ^{VGE = 4.5V}
V_GE = 4.0V
V_GE = 3.7V
20
10
T_J = 175^oC
0
0
1
2
3
4
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage
vs. Collector Current
25
V_GE = 4.0V
20
15
10
5
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE(^oC)
Figure 11. DC Collector Current vs. Case
Temperature
40
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
30 ^{VCE = 5V}
T_J = -40^oC
T_J = 25^oC
20
T_J = 175^oC
10
0
0
1
2
3
4
5
6
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 10. Transfer Characteristics
2.0
V_CE = V_GE
1.8
I_CE = 1mA
1.6
1.4
1.2
1.0
0.8
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE(^oC)
Figure 12. Threshold Voltage vs. Junction
Temperature
FGB3040CS Rev. C1
4
www.fairchildsemi.com