FGA50N100BNTD Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 1000V, 50A NPT-Trench IGBT CO-PAK

10000
Cies
1000
Coes
100
Cres
Common Emitter
V = 0V, f = 1MHz
GE
T = 25 oC
C
0
5
10
15
20
25
30
Collector-Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
V =600V, Rg=51 Ω
CC
V =+/-15V , T =25 ^oC
GE
C
Tdoff
Tf
Tr
100 _Tdon
10
20
30
40
50
60
C ollector C urrent, I [A ]
C
Fig 9. Switching Characteristics vs.
Collector Current
10000
1000
V =600V, I =60A
CC
C
V = +/-15V
GE
T =25 oC
C
100
Tdoff
Tr
Tdon
Tf
10
0
50
100
150
200
Gate Resistance, R [Ω ]
G
Fig 8. Switching Characteristics vs.
Gate Resistance
20
Common Emitter
V =600V, R =10 Ω
CC
L
T =25 oC
C
15
10
5
0
0
50
100
150
200
250
300
Gate Charge, Q [nC]
g
Fig 10. Gate Charge Characteristics
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
DC Operation
1
50µs
100µs
1ms
0.1 ^{Single Nonrepetitive}
Pulse Tc = 25^oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Fig 11. SOA Characteristics
FGA50N100BNTD Rev. A
1
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular PulseDuration[sec]
Fig 12. Transient Thermal Impedance of IGBT
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