FDW2502PZ Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
I_D = - 4.4A
4
3
V_DS = - 5V
-10V
–15V
2
1
0
0
3
6
9
12
15
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = -4.5V
0.1 ^{SINGLE PULSE}
R _θJA = 250^oC/W
T_A = 25 ^oC
100µ s
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2100
1800
1500
1200
900
600
300
0
0
C_ISS
f = 1MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
15
R_θJA = 250°C/W
T_A = 25°C
10
5
0
0.01
0.1
1
10
100
t₁, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 250 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDW2502PZ Rev. B (W)