FDT434P Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

Typical Characteristics
5
I D = -6.0A
4
3
2
V_{D S}= - 5V
-1 0V
-1 5V
1
0
0
3
6
9
12
15
Q g , GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
10ms
100ms
1s
10s
DC
100µs
V_GS= -4.5V
0.1 ^{SINGLE PULSE}
R_θJA= 42^oC/W
T_A= 25^oC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2500
1000
400
200
100
50
0.1
0.3
1
3
10 20
-V , DRAIN TO SOURCEVOLTAGE (V)
Figure 8. Capacitance Characteristics.
200
SINGLE PULSE
160
R_θJA = 110^oC/W
T_A = 25^oC
120
80
40
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.001
0.01
0.1
1
10
t1, TIME (sec)
R_θJA(t) = r(t) + R_θJA
R_θJA = 110 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDT434P Rev. C1 (W)