FDS8984_07 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
10
8
V_DD = 15V
6
V_DD = 10V
4
V_DD = 20V
2
0
0
2
4
6
8
10
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
700
600
C
ISS
500 _{f = 1MHz}
V_GS = 0V
400
300
C
OSS
200
100
C
RSS
0.1
1
10
30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance vs Drain to Source Voltage
20
10
STARTING T = 25^OC
J
STARTING T = 125OC
J
1
0.01
0.1
1
10 20
t , TIME IN AVALANCHE (mS)
AV
Figure 9. Unclamped Inductive Switching
Capability
8
7
6
V =10V
GS
5
4
3
V =4.5V
GS
2
1
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (oC)
A
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
100
10us
10
100us
1
1ms
OPERATION IN THIS
AREA MAY BE
0.1 ^{LIMITED BY rDS(on)}
SINGLE PULSE
TJ = MAX RATED
TA = 25^oC
0.01
0.1
1
10ms
100ms
1s
DC
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
3000
1000
100
V_GS=10V
10
T_A = 25^oC
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
-¹---⁵---⁰-----^–----^T----^A---
125
SINGLE PULSE
1
10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹ 10² 10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS8984 Rev. A1
4
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