FDS8960C Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

Typical Characteristics: Q1 (N-Channel)
20
VGS = 10V
6.0V
16
4.5V
3.5V
12
8
3.0V
4
0
0
0.5
1
1.5
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.6
2.4
2.2
2
VGS = 3.5V
1.8
1.6
4.0V
1.4
4.5V
1.2
5.0V
6.0V
1
0.8
0
4
8
12
16
ID, DRAIN CURRENT (A)
10V
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 7A
VGS = 10V
1.6
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.065
0.055
ID = 3.5A
0.045
0.035
TA = 125^oC
0.025
0.015
2
TA = 25^oC
3
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
VDS = 5V
25
20
TA = -55^oC
25^oC
125 ^oC
15
10
5
0
1.5
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125^oC
25^oC
-55 ^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C(W)
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