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FDS7066N3 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET
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Typical Characteristics
10
ID = 23A
8
VDS = 5V
10V
15V
6
4
2
0
0
10 20 30 40 50 60 70 80 90
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 85oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
6400
5600
4800
4000
3200
2400
1600
800
0
0
CISS
f = 1 MHz
VGS = 0 V
COSS
CRSS
6
12
18
24
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
0.1
1
10
100
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 85oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS7066N3 Rev B1 (W)
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