FDS6961A Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PowerTrenchTM MOSFET

Typical Electrical Characteristics
10
I_D = 3.5A
8
6
V_DS = 5V
10V
15V
4
2
0
0
1
2
3
4
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
10
5
RDS(ON) ^LIMIT
2
1
0.5
V_GS =10V
0.1 _{SINGLE PULSE}
0.05
R_θJTAA=_{A=13255°°CC/W}
100us
1ms
10ms
100ms
1s
10s
DC
0.01
0.1 0.2
0.5 1
2
5
10
V_DS , DRAIN-SOURCE VOLTAGE (V)
30 50
500
200
C iss
100
50
Coss
f = 1 MHz
20
V_GS = 0 V
Crss
10
0.1 0.2
0.5
1
2
5
10
30
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
30
25
20
15
10
5
0
0.01
SINGLE PULSE
RθJA =135 °C/W
TA = 25°C
0.1
0.5
10
SINGLE PULSE TIME (SEC)
50 100 300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t₁ , TIME (sec)
R _θJA (t) = r(t) * R _θJA
R _θJA =135° C/W
P(pk)
t1
t2
T_J - T_A = P * R_θJA (t)
Duty Cycle, D = t₁ /t₂
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6961A Rev.C