FDS6930B_10 Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PowerTrench® MOSFET

Typical Characteristics
10
ID = 5.5A
8
6
4
VDS = 5V
15V
10V
2
0
0
1
2
3
4
5
6
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10.0V
0.1 _{SINGLE PULSE}
RθJA = 135°C/W
TA = 25°C
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
500
f = 1 MHz
V_GS = 0 V
400
300
C_iss
200
C_oss
100
C_rss
0
0
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
Rθ_JA = 135°C/W
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
t₁, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
Rθ_JA(t) = r(t) * Rθ_JA
Rθ_JA = 135°C/W
P(pk)
t₁
t₂
T_J - T_A = P * Rθ_JA(t)
Duty Cycle, D = t₁ / t₂
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6930B Rev. A1
4
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