FDS6679 Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 30 Volt P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -13A
8
6
V_DS = -5V
-10V
-15V
4
2
0
0
10
20
30
40
50
60
70
80
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R _DS(ON) LIMIT
10
1
V_GS = -10V
0.1 ^{SINGLE PULSE}
R_θJA = 125^oC/W
T_A = 25^oC
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
6000
5000
4000
3000
2000
1000
0
0
C _ISS
f = 1 MHz
V_GS = 0 V
C_OSS
C_RSS
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R_θJA = 125°C/W
40
T_A = 25°C
30
20
10
0
0.001
0.01
0.1
1
t₁, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 125 ^oC/W
P(pk)
t1
t2
TJ - T A = P * R θJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient t hermal response will change depending on the circuit board design.
FDS6679 Rev C(W)