FDS6676 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Typical Characteristics
50
VGS = 10V
4.5V
40
3.5V
3.0V
30
2.5V
20
10
0
0
0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
VGS = 3.0V
1.4
3.5V
1.2
4.0V
4.5V
6.0V
1
10V
0.8
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 14.5A
1.6 _{VGS = 10V}
1.4
1.2
1
0.8
0.6
-50 -25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation with
Temperature.
0.02
0.015
0.01
TA = 125^oC
ID = 7.25 A
0.005
TA = 25^oC
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
VDS = 5.0V
40
30
TA = 125^oC
20
25^oC
10
-55^oC
0
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
100
VGS = 0V
10
1
TA = 125^oC
0.1
25^oC
0.01
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676 Rev D (W)