FDS6672A Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

Typical Characteristics
5
I_D = 12.5A
4
3
V_DS = 5V
10V
15V
2
1
0
0
10
20
30
40
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1s
10s
DC
V_GS = 10V
0.1 ^{SINGLE PULSE}
R_θJA = 125^oC/W
T_A = 25^oC
0.01
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
8000
6000
4000
C_ISS
f = 1MHz
V_GS = 0 V
2000
C_RSS
0
0
5
C_OSS
10
15
20
25
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
R_θJA = 125°C/W
T_A = 25°C
0.1
1
t₁, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) + R_θJA
R_θJA = 125°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6672A Rev B(W)