FDS6064N3 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

Typical Characteristics
5
I_D =
4
3
2
1
0
0
15
V_DS = 5V
10V
15V
30
45
60
75
90
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
R_DS(ON) LIMIT
10
1
V_GS = 4.5V
SINGLE PULSE
0.1
R_θJA = 85^oC/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
10000
8000
6000
C_ISS
f = 1MHz
V_GS = 0 V
4000
2000
C_OSS
C_RSS
0
0
5
10
15
20
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.01
0.1
SINGLE PULSE
R_θJA = 85°C/W
T_A = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) * R_θJA
R_θJA = 85 °C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS6064N3 Rev B2 (W)