FDS4770_04 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench®MOSFET

Typical Characteristics
80
V_GS = 10V
70
6.0V
60
5.5V
5.0V
50
40
30
4.5V
20
10
0
0
0.5
1
1.5
2
2.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.8 ^{ID = 13.2A}
V_GS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0
25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
90
V_DS = 5V
75
60
45
T_A = 125^oC
30
25^oC
15
-55^oC
0
2.5
3.5
4.5
5.5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
1.8
V_GS = 5.0V
1.6
1.4
5.5V
6.0V
1.2
7.0V
8.0V
10V
1
0.8
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.019
0.016
I_D = 6.6A
0.013
0.01
T_A = 125^oC
0.007
T_A = 25^oC
0.004
4
5
6
7
8
9
10
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4770 Rev C(W)