FDS4072N3 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench MOSFET

Typical Characteristics
80
V_GS =10V
4.5V
60
3.0V
2.5V
40
20
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.9
I_D = 12.4A
V_GS = 4.5V
1.6
1.3
1
0.7
0.4
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
80
V_DS = 5V
60
40
20
T_A =125^oC
25^oC
-55^oC
0
1
1.5
2
2.5
3
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.6
1.4
V_GS = 2.5V
1.2
3.0V
3.5V
4.5V
1
10V
0.8
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
0.02
0.015
T_A = 125^oC
I_D = 6.2A
0.01
T_A = 25^oC
0.005
1
4
7
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
25^oC
0.01
0.001
-55^oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4072N3 Rev B1 (W)