FDS4070N7_04 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench MOSFET

Typical Characteristics
60
V_GS = 10V
50
7.0V
40
30
6.0V _5.5V
5.0V
20
4.5V
10
0
0
0.25
0.5
0.75
1
1.25
1.5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6
I_D = 15.3A
V_GS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. On-Resistance Variation
withTemperature.
60
V_DS = 5V
50
40
30
T_A =125^oC
20
25^oC
10
-55^oC
0
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
V_GS = 5.0V
2.6
2.2
1.8
5.5V
1.4
6.0V
1
7.0V
10V
0.6
0
10
20
30
40
50
60
I_D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.015
0.013
I_D = 7.7A
0.011
0.009
T_A = 125^oC
0.007
0.005
T_A = 25^oC
0.003
4
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V_GS = 0V
10
1
T_A = 125^oC
0.1
0.01
25^oC
-55^oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4070N7 Rev B2 (W)