FDS2672_10 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET

Typical Characteristics T_J = 25°C unless otherwise noted
10
8
V_DD = 50V
V_DD = 100V
6
V_DD = 150V
4
2
0
0
8
16
24
32
40
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
10000
1000
100
f = 1MHz
C_iss ^{VGS = 0V}
C_oss
C_rss
10
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
10
T_J = 25^oC
1
T_J = 125^oC
0.1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE(ms)
1000
Figure 9. Unclamped Inductive Switching
Capability
4.0
3.5
3.0
2.5
V_GS = 10V
2.0
V_GS = 6V
1.5
1.0
0.5
R_θJA = 50^oC/W
0.0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (oC)
A
Figure 10. Ambient Continuous Drain Current vs
Case Temperature
10²
10¹
100us
10⁰
1ms
LIMITED BY
10^-1
PACKAGE
10ms
100ms
1s
10^-2 OPERATION IN THIS ^{SINGLE PULSE}
AREA MAY BE
T_J = MAX RATED
DC
LIMITED BY r_DS(on) ^{TA = 25OC}
10^-3
0.01
0.1
1
10
100
1000
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11. Forward Bias Safe Operating Area
3000
1000
100
V_GS = 10V
T_A = 25^oC
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
I = I₂₅
1_----5_---0_{-----–----}T_----A---
125
10
SINGLE PULSE
1
10^-4 10^-3 10^-2 10^-1 10⁰ 10¹ 10² 10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDS2672_F085 Rev. A
4
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