FDR4420A_07 Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrench MOSFET

Typical Electrical Characteristics (continued)
10
I _D = 11A
8
6
VDS = 5V
10V
15V
4
2
0
0
10
20
30
40
50
60
Q _g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
20 RDS(ON) ^LIMIT
5
1
0.3
V_GS = 10V
0.1
SINGLE PULSE
11m00sus
10ms
100ms
1s
10s
DC
0.03
R _θJA= 135°C/W
TA = 25°C
0.01
0.1 0 2
0.5 1
2
5
10
30 50
V_DS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
5000
3000
2000
C _iss
1000
500
f = 1 MHz
V_GS = 0V
C _oss
C _rss
200
0.1
0.3
1
3
10
30
V_DS , DRA N TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
R θJA= 135°C/W
TA = 25°C
30
20
10
0
0.0001
0.001
0.01
0.1
1
10
S NGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum Power
Dissipation.
1
05
D = 0.5
03
02
0.2
0.1
0 05
0 03
0 02
0 01
0 0001
0.1
0.05
0.02
0.01
Single Pulse
0 001
0.01
0.1
1
t ₁, TIME (sec)
R_θJA (t) = r(t) * R_θJA
R _θJA = 135°C/W
P(pk)
t_{1 t 2}
T_J - T_A = P * R _θJA (t)
Duty Cycle, D = t ₁/ t ₂
10
100
300
Figure 11.Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
FDR4420 Rev.D