FDP12N50_12 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 11.5A, 0.65Ω

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
0.8
-100
*Notes:
1. V_GS = 0V
2. I_D = 250μA
-50
0
50 100 150 200
T_J, Junction Temperature [^oC]
1.0
0.5
0.0
-100
*Notes:
1. V_GS = 10V
2. I_D = 6A
-50 0
50 100 150 200
T_J, Junction Temperature [^oC]
Figure 9-1. Maximum Safe Operating Area
- FDP12N50
100
20μs
100μs
10
1ms
1
Operation in This Area
is Limited by R _DS(on)
10ms
DC
0.1
0.01
1
*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
10
100
800
V_DS, Drain-Source Voltage [V]
Figure 9-2. Maximum Safe Operating Area
- FDPF12N50T
100
20μs
10
100μs
1ms
10ms
1
Operation in This Area
is Limited by R _DS(on)
DC
0.1
* Notes :
1. T_C = 25^oC
2. T_J = 150^oC
0.01
1
3. Single Pulse
10
100
V_DS, Drain-Source Voltage [V]
1000
Figure 10. Maximum Drain Current vs. Case Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
FDP12N50 / FDPF12N50T Rev. C0
4
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