FDP054N10 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
2.4
2.0
1.1
1.6
1.0
1.2
0.9
0.8
-80
* Notes :
1. V_GS = 0V
2. I_D = 10mA
-40 0 40 80 120 160 200
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
1000
100
10
Operation in This Area
is Limited by R _DS(on)
1
10μs
100μs
1ms
10ms
DC
0.1
0.01
0.1
*Notes:
1. T_C = 25^oC
2. T_J = 175^oC
3. Single Pulse
1
10
V_DS, Drain-Source Voltage [V]
100 200
0.8
0.4
-80
* Notes :
1. V_GS = 10V
2. I_D = 75A
-40 0 40 80 120 160 200
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
150
100
Limitted by package
50
0
25 50 75 100 125 150 175
T_C, Case Temperature [^oC]
Figure 11. Transient Thermal Response Curve
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10^-5
10^-4
P_DM
t₁
t₂
* Notes :
1. Z_θJC(t) = 0.57^oC/W Max.
2. Duty Factor, D=t₁/t₂
3. T_JM - T_C = P_DM * Z_θJC(t)
10^-3
10^-2
10^-1
1
10
Rectangular Pulse Duration [sec]
FDP054N10 Rev. A
4
www.fairchildsemi.com