FDMS86350 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 25 A
8
6
V_DD = 40 V
V_DD = 30 V
V_DD = 50 V
10000
1000
C_iss
C_oss
4
2
0
0
20
40
60
80 100 120
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
100
f = 1 MHz
VGS = 0 V
10
0.1
1
C_rss
10
80
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
T_J = 25 ^oC
10
T_J = 100 ^oC
T_J = 125 ^oC
1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
1000
200
R_θJC = 0.8 ^oC/W
160
V_GS = 10 V
120
V_GS = 8 V
80
Limited by Package
40
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
100
100 μs
10
1 ^{THIS AREA IS}
LIMITED BY r_DS(on)
SINGLE PULSE
0.1 ^{TJ = MAX RATED}
R_θJA = 115 ^oC/W _{CURVE BENT TO}
T_A = 25 ^oC
MEASURED DATA
0.01
0.01
0.1
1
10
1 ms
10 ms
100 ms
1s
10 s
DC
100 400
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
10000
1000
100
SINGLE PULSE
R_θJA = 115 ^oC/W
T_A = 25 ^oC
10
1
0.5
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
4
FDMS86350 Rev. C
www.fairchildsemi.com