FDMS8020 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 42 A, 2.5 mΩ

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 26 A
8
6
4
V_DD = 12 V
V_DD = 18 V
V_DD =15 V
2
0
0 5 10 15 20 25 30 35 40 45
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
C_iss
1000
C_oss
100
C_rss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
T_J = 25 ^oC
10
T_J = 100 ^oC
150
R_θJC = 1.9 ^oC/W
120
V_GS = 10 V
90
V_GS = 4.5 V
60
T_J = 125 ^oC
1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
100 300
30
Limited by Package
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
100
100 μs
10
1 ms
1 ^{THIS AREA IS}
LIMITED BY r_DS(on)
10 ms
100 ms
0.1
0.01
0.01
SINGLE PULSE
T_J = MAX RATED
R_θJA = 125 ^oC/W
T_A = 25 ^oC
0.1
1
1s
10 s
DC
10
100200
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
SINGLE PULSE
R_θJA = 125 ^oC/W
T_A = 25 ^oC
10
1
0.5
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
4
FDMS8020 Rev. C
www.fairchildsemi.com