FDMS36101L_F085 Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 100V, 38A, 26m

Typical Characteristics
1000
100
10
OPERATION IN THIS
AREA MAY BE
1 ^{LIMITED BY rDS(on)}
SINGLE PULSE
TJ = MAX RATED
TC = 25^oC
0.1
100us
1ms
10ms
100ms
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
200
100
If R = 0
t_AV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
STARTING TJ = 25^oC
10
STARTING T_J = 150^oC
1
0.001 0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
75 ^{VDD = 5V}
50
T_J = 25^oC
25
T_J = 175^oC
T_J = -55^oC
0
1
2
3
4
5
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
100
V_GS = 0 V
10
T_J = 175 ^oC
1
T_J = 25 ^oC
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Forward Diode Characteristics
100
80
V_GS
10V Top
8V
60
6V
5V
4.5V
4V Bottom
40
20
0
0
80μs PULSE WIDTH
Tj=25^oC
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
80
60
V_GS5.5V
10V Top
8V
40
6V
5V
4.5V
4V Bottom
20
80μs PULSE WIDTH
Tj=175^oC
0
0
1
2
3
4
5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Saturation Characteristics
FDMS36101L_F085 Rev. C1
4
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