FDMD82100 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Dual N-Channel Power Trench MOSFET

Typical Characteristics T_J = 25 °C unless otherwise noted
10
I_D = 7 A
8
6
V_DD = 50 V
V_DD = 25 V
V_DD = 75 V
4
2
0
0
2
4
6
8 10 12 14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
100
C_iss
C_oss
C_rss
10 _{f = 1 MHz}
VGS = 0 V
1
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
T_J = 25 ^oC
10
T_J = 100 ^oC
T_J = 150 ^oC
40
30
20
Limited by Package
10
R_θJC = 3.1 ^oC/W
V_GS = 10 V
V_GS = 6 V
1
0.001 0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure10. MaximumContinuousDrain
Current vs Case Temperature
200
100
10
1
0.1
0.1
10 μs
THIS AREA IS
LIMITED BY r_DS(on)
SINGLE PULSE
T_J = MAX RATED
R_θJC = 3.1 ^oC/W
T_C = 25 ^oC
CURVE BENT TO
MEASURED DATA
100 μs
1 ms
10 ms
DC
1
10
100 300
V_DS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
10000
1000
SINGLE PULSE
R_θJC = 3.1 ^oC/W
T_C = 25 ^oC
100
10
10^-5
10^-4
10^-3
10^-2
10^-1
1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
4
FDMD82100 Rev.C1
www.fairchildsemi.com