FDMC8878 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm

Typical Characteristics T_J = 25°C unless otherwise noted
10
I_D = 9.6A
8
6
4
V_DD = 15V
V_DD = 10V
V_DD = 20V
2
0
0
5
10
15
20
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
3000
1000
C_iss
C_oss
C_rss
100 ^{f = 1MHz}
VGS = 0V
50
0.1
1
10
30
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
T_J = 25^oC
T_J = 125^oC
1
0.01
0.1
1
10
80
t_AV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
12
10
8
V_GS = 10V
6
V_GS = 4.5V
4
2
R_θJA = 60^oC/W
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
80
100us
10
1ms
1
10ms
0.1
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(on)
0.001
0.1
1
SINGLE PULSE
T_J = MAX RATED
T_A = 25^oC
10
100ms
1s
10s
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
300
V_GS = 10V
T_A = 25^oC
100
FOR TEMPERATURES
ABOVE 25^oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I₂₅
1_----5_---0_----–_-----T_---A---
125
10
1
SINGLE PULSE
0.5
10^-3
10^-2
10^-1
10⁰
10¹
10²
10³
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
FDMC8878 Rev.D
4
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