FDFMA2P857_08 Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode .20V, .3.0A, 120mΩ

Typical Characteristics T_A = 25°C unless otherwise noted
6
V_GS =-4.5V
5
-3.5V
4
-2.5V
-3V
-2V
-1.8V
3
2
-1.5V
1
0
0.0
0.5
1.0
1.5
2.0
2.5
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
V_GS =-1.5V
2.5
2.0
-1.8V
-2.0V
1.5
-2.5V
-3.0V
-3.5V
1.0
-4.5V
0.5
0
1
2
3
4
5
6
-I_D, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.4
I_D =-3A
1.3 _{VGS = -4.5V}
1.2
1.1
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (^oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
0.28
0.22
I_D =-1.5A
0.16
T_A = 125^oC
0.10
T_A = 25^oC
0.04
0
2
4
6
8
10
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
6
V_DS = -5V
5
4
3
T_A = 125^oC
2
-55^oC
1
25^oC
0
0.0
0.5
1.0
1.5
2.0
2.5
-V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
V_GS = 0V
1
0.1
T_A = 125^oC
0.01
0.001
25^oC
-55^oC
0.0001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V_SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDFMA2P857 Rev.B1
4
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