FDD7N25LZTM Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel UniFET MOSFET

Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
0.8
-80
* Notes :
1. V_GS = 0V
2. I_D = 250uA
-40
0
40 80 120 160
T_J, Junction Temperature [^oC]
Figure 9. Maximum Safe Operating Area
- FDD7N25LZ
40
30s
10
100s
1ms
1
0.1
0.01
0.1
10ms
DC
Operation in This Area
is Limited by R _DS(on)
* Notes :
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
1
10
100 400
V_DS, Drain-Source Voltage [V]
1.0
0.5
0
-80
* Notes :
1. V_GS = 10V
2. I_D = 3.1A
-40
0
40 80 120 160
T_J, Junction Temperature [^oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
6
5
4
3
2
1
0
25
50
75
100
125
150
T_C, Case Temperature [^oC]
Figure 11. Transient Thermal Response Curve
- FDD7N25LZ
5
1 ^0.5
0.2
0.1
0.05
0.1 _0.02
0.01
Single pulse
0.01
10^-5
10^-4
P_DM
t₁
t₂
* Notes :
1. Z_JC(t) = 2.2^oC/W Max.
2. Duty Factor, D=t₁/t₂
3. T_JM - T_C = P_DM * Z_JC(t)
10^-3
10^-2
10^-1
1
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
4
FDD7N25LZ Rev. C0
www.fairchildsemi.com