FDC8878 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 8.0 A, 16 mΩ

Typical Characteristics T_J = 25°C unless otherwise noted
10
I_D = 8 A
8
6
4
2
V_DD = 10 V
V_DD = 15 V
V_DD = 20 V
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
C_iss
C_oss
100
f = 1 MHz
VGS = 0 V
10
0.1
1
10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
C_rss
30
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
T_J = 25 ^oC
T_J = 100 ^oC
T_J = 125 ^oC
1
0.001 0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
100
10
100 us
1
THIS AREA IS
LIMITED BY r_DS(on)
SINGLE PULSE
0.1 _{TJ = MAX RATED}
R_θJA = 175 ^oC/W
T_A = 25 ^oC
0.01
0.01
0.1
1
10
V_DS, DRAIN to SOURCE VOLTAGE (V)
1 ms
10 ms
100 ms
1s
10 s
DC
100
Figure 11. Forward Bias Safe
Operating Area
10
8
V_GS = 10 V
6
V_GS = 4.5 V
4
2
R_θJA = 78 ^oC/W
0
25
50
75
100
125
150
T_A, AMBIENT TEMPERATURE (^oC)
Figure 10. Maximum Continous Drain Current
vs. Ambient Temperature
1000
SINGLE PULSE
100
R_θJA = 175 ^oC/W
T_A = 25 ^oC
10
1
0.1
10^-4 10^-3 10^-2 10^-1
1
10
t, PULSE WIDTH (s)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
4
FDC8878 Rev.C2
www.fairchildsemi.com