TN6726A_00 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
β = 10
1
0.8
0.6
0.4
1
- 40 °C
25 °C
125 °C
10
100
I _C - COLLECTOR CURRENT ( mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
10 0
V_CB = 2 0V
10
1
0.1
25
50
75
10 0
125
150
T A - AM BIENT TE MPE RATURE (°C)
Gain Bandwidth Product
vs Collector Current
250
V _CE = 10V
200
150
100
50
0
1
10
100
1000
I _C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
1
- 40 °C
25 °C
125 °C
V_CE = 5.0 V
10
100
I _C - COLLECTOR CURRENT (mA)
1000
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1.0 MHz
30
20
10
0
0
10
20
30
V_CB- COLLECTOR-BASE VOLTAGE (V)
Safe Operating Area TO-226 / SOT-223
10
1
0.1
*PULSED
OPERATION
100
DDCCTT_{CAOML LBEIECNTTO R=L2E5A°DC =}
µ_S*
1.0
25 _°C
10 _µS*
ms*
T _A = 25 °C
0.01
1
LIMIT DETERMINED
BY BV _CEO
10
100
V _CE- COLLECTOR-EMITTER VOLTAGE (V)