TN3440A_00 Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1000
- 40 °C
800
600
25 ° C
125 ° C
400
β = 10
200
0
1
10
100
1000
I _C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
V_CB= 225V
100
10
1
0.1
25
50
75
100
125
150
T _A- AMBIENT TE MPE RATURE (_°C)
Contours of Constant Gain
Bandwidth Product (f T )
10
5
60 MHz
40 MHz
20 MHz
40 MHz
20 MHz
1
1
10
100
I_C- COLLECTOR CURRENT (mA)
1000
Base-Emitter ON Voltage vs
Collector Current
10 0 0
800
600
400
200
- 40 °C
25 °C
125 °C
V_CE = 5V
0
1
10
10 0
1 00 0
I _C - COLLECTOR CURRENT (mA)
Collector-Base / Emitter-Base
Capacitance vs Reverse Bias Voltage
1000
800
600
400
200
C ib, I_E = 8
100
80
60
40
Ccb, IE = 0
20
10
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
1
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (^o C)