TIP146TU Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Silicon Darlington Transistor

Typical Performance Characteristics
-10
-9
-8
IB = -1800μA
-7
IB = -2000μA
IB = -1600μA
IB = -1400μA
-6
IB = -1200μA
IB = -1000μA
-5
IB = -800μA
-4
-3
IB = -600μA
-2
-1
IB = -400μA
-0
-0
-1
-2
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100000
10000
VCE = -4V
1000
100
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
-10
VBE(sat)
-1
VCE(sat)
-0.1
IC=-500IB
-1000
-100
f=0.1MHz
-0.01
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-10
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
-1000
Figure 4. Collector Output Capacitance
-100
-10
DC
-1
-0.1
-1
TIP145
TIP146
TIP147
-10
-100
-1000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 5. Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
TIP145 / TIP146 / TIP147 Rev. B1
3
150
125
100
75
50
25
0
0
25
50
75
100
125
150
175
TC[^oC], CASE TEMPERATURE
Figure 6. Power Derating
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