TIP125_08 Datasheet, PDF (3/5 Pages) Fairchild Semiconductor – PNP Epitaxial Darlington Transistor

Typical Characteristics
10k
VCE = 4V
1k
100
-0.1
-1
-10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
f = 0.1MHz
100
Cob
Cib
10
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
90
75
60
45
30
15
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.1
IC = 250IB
VBE(sat)
VCE(sat)
-1
-10
IC[A], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
1m500^ms ^100ms
5m s
s
DC
-1
-0.1
-0.01
-1
TIP125
TIP126
TIP127
-10
-100
V_CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
TIP125/TIP126/TIP127 Rev. 1.0.0
3
www.fairchildsemi.com